Product - 2SC1971
Product - 2SC2782 100W VHF
Product - 2SC2694
Product - BLF-278 300W VHF Mosfet
Product - BLF-574 600 Watt
Description :
Ready Stock
Barang Baru
# 43-50 Volts @ 15 - 17.5ADC
# 87.5-108MHz
# BLF574 50volt LDMOS Technology.
# Input/Output 50 ohms
# Pout 600W min. 2 watt input
# P1dB greater than 650W
# 25 dB gain minimum.
# Class B push-pull.
# Temperature compensated bias.
# Compact size; LxWxH 4.0 x 2.25 x 1.5 inches
# Standard 1/4 inch copper base
The BLF574 is the latest high performance technology from NXP. These new 50 volt LDMOS transistors are ideal for that 1KW amplifier project.
Ready Stock
Barang Baru
# 43-50 Volts @ 15 - 17.5ADC
# 87.5-108MHz
# BLF574 50volt LDMOS Technology.
# Input/Output 50 ohms
# Pout 600W min. 2 watt input
# P1dB greater than 650W
# 25 dB gain minimum.
# Class B push-pull.
# Temperature compensated bias.
# Compact size; LxWxH 4.0 x 2.25 x 1.5 inches
# Standard 1/4 inch copper base
The BLF574 is the latest high performance technology from NXP. These new 50 volt LDMOS transistors are ideal for that 1KW amplifier project.
Product - BGD804 Amplifier 40 to 860 MHz
Description : NXP Semiconductors
Description: Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC).
Category: Video Amplifier ICs
Series Designators: BGD804
Features:
* Excellent linearity
* Extremely low noise
* Silicon nitride passivation
* Rugged construction
* Gold metallization ensures excellent reliability.
Applications:
* CATV systems in the 40 to 860 MHz frequency range.
Description: UHF power LDMOS transistor - Application: TV and UHF Communication transmitters ; Description: UHF LDMOS RF POWER Transistor ; Efficiency: 55 %; Frequency: 470 - 860 MHz; Load power: 150 W; Operating voltage: 32 VDC; Power gain: 15 dB
Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap.
RoHS: Yes Pb Free: No
Lifecycle: Active
Type: RF, RFID, ZigBee Transistors and FETs
Description :
designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 50 volt analog or digital television transmitter equipment.
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of these devices make them ideal for large- signal, common-source amplifier
applications in 50 volt analog or digital television transmitter equipment.
• Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain . 22.5 dB
Drain Efficiency . 28%
ACPR @ 4 MHz Offset . -62 dBc @ 4 kHz Bandwidth
• Typical Broadband Two-Tone Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 450 Watts PEP, f = 470 -860 MHz
Power Gain . 22 dB
Drain Efficiency . 44%
IM3 . -29 dBc
• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz:
450 Watts CW
90 Watts Avg. (DVB-T OFDM Signal, 10 dB PAR, 7.61 MHz Channel
Bandwidth)
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Input Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Excellent Thermal Stability
• Designed for Push- Pull Operation
• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 50 volt analog or digital television transmitter equipment.
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of these devices make them ideal for large- signal, common-source amplifier
applications in 50 volt analog or digital television transmitter equipment.
• Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain . 22.5 dB
Drain Efficiency . 28%
ACPR @ 4 MHz Offset . -62 dBc @ 4 kHz Bandwidth
• Typical Broadband Two-Tone Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 450 Watts PEP, f = 470 -860 MHz
Power Gain . 22 dB
Drain Efficiency . 44%
IM3 . -29 dBc
• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz:
450 Watts CW
90 Watts Avg. (DVB-T OFDM Signal, 10 dB PAR, 7.61 MHz Channel
Bandwidth)
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Input Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Excellent Thermal Stability
• Designed for Push- Pull Operation
• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Product - RD30HVF1 Power Transistor
Description : RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
FEATURES
High power gain: Pout>30W,
Gp>14.7dB @Vdd=12.5V,f=175MHz
High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band Mobile radio sets.
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